2N2222 2N2222 is an NPN silicon epitaxial planar transistor designed for high-speed switching applications up to 500mA collector current.
Mfr Part #:

2N2222

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
2N2222 is an NPN silicon epitaxial planar transistor designed for high-speed switching applications up to 500mA collector current.
Total Stock: 102 pcs
$ Price Range: $0.16

2N2222 Available from 2 distributors

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2N2222 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (VBE(sat)) (Max) @ Ib, Ic
Collector Current (Nominal/Maximum)
Collector-Base Breakdown Voltage (V(BR)CBO)
Collector-Base Capacitance (CCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (V(BR)EBO)
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Thermal Resistance (Maximum @ Junction to case)
Thermal Resistance (Maximum @ Junction-to-Ambient)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N2222 Description

Short technical summary and product information.

The 2N2222 is a silicon planar epitaxial NPN transistor in a Jedec TO-18 metal case, manufactured by STMicroelectronics. It is designed for high-speed switching applications at collector currents up to 500 mA, featuring useful current gain over a wide range of collector current, low leakage currents, and low saturation voltages.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 30V minimum, a continuous collector current rating of 600mA (800mA maximum), and a DC current gain (hFE) of 100 minimum at 150mA and 10V. The transition frequency is typically 250MHz, making it suitable for moderate-speed switching and amplification.

 

The transistor is through-hole mounted in a TO-18 (TO-206AA) metal can package. Maximum power dissipation is 500mW at 25°C ambient, with a maximum junction temperature of 175°C. Thermal resistance from junction to ambient is 300°C/W and from junction to case is 83.3°C/W.

2N2222 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N2222
Canonical Name: 2N2222 NPN Bipolar Transistor
Subcategory: Single BJT

2N2222 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2222 Estimated Pricing

Qty Low High
2,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2222 Features

  • NPN silicon epitaxial planar transistor.
  • 30V collector-emitter breakdown voltage.
  • 600mA continuous collector current rating.
  • 250MHz typical transition frequency.
  • TO-18 through-hole metal can package.

2N2222 Applications

  • High-speed switching circuits up to 500mA.
  • General-purpose amplification and switching.
  • Signal processing and driver stages.
  • Low-power DC-DC converter designs.

2N2222 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N2222?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is 30V at IC=10mA, IB=0.

What is the maximum collector current for the 2N2222?

The maximum collector current is 0.8A, with a continuous rating of 600mA.

What is the package type of the 2N2222?

The 2N2222 is available in a TO-206AA, TO-18-3 Metal Can package with through-hole mounting.

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 175°C.

Is the 2N2222 RoHS compliant?

The part is listed as RoHS3 Compliant, though this is unverified.

What is the transition frequency of the 2N2222?

The typical transition frequency (fT) is 250MHz at IC=20mA, VCE=20V, f=100MHz.

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