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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N2219A is a silicon NPN transistor manufactured using the epitaxial planar process. It is designed for general purpose and switching applications.
Key electrical characteristics include a maximum Collector-Emitter Voltage (V CEO) of 40V and a maximum Continuous Collector Current (I C) of 800mA. The device offers a DC Current Gain (hFE) ranging from 100 to 300 at I C=150mA and V CE=10V. Its transition frequency (fT) is 300 MHz at V CE=20V and I C=20mA.
This transistor comes in a TO-5 metal can package and is suitable for through-hole mounting. The operating and storage junction temperature range is -65 to +200 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V CEO) for the 2N2219A is 40V.
The continuous collector current (I C) for the 2N2219A is 800mA.
The 2N2219A transistor comes in a TO-5 package.
The operating and storage junction temperature range for the 2N2219A is -65 to +200 °C.
The typical transition frequency (fT) of the 2N2219A is 300 MHz.