2N2219A NPN bipolar junction transistor with 30V collector-emitter breakdown voltage, 800mA continuous collector current, 800mW power dissipation, and 250MHz transition frequency in a TO-39 metal can package.
Mfr Part #:

2N2219A

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar junction transistor with 30V collector-emitter breakdown voltage, 800mA continuous collector current, 800mW power dissipation, and 250MHz transition frequency in a TO-39 metal can package.
Total Stock: 602 pcs

2N2219A Available from 4 distributors

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2N2219A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Spacing
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N2219A Description

Short technical summary and product information.

The 2N2219A is an NPN bipolar junction transistor manufactured by STMicroelectronics. It is designed for general-purpose switching and amplifier applications requiring moderate voltage and current handling.

 

Key electrical specifications include a collector-emitter breakdown voltage of 30V, a continuous collector current rating of 800mA, and a maximum power dissipation of 800mW with an operating junction temperature up to 175°C. The transistor offers a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. Saturation voltage is typically 1.6V maximum at a base current of 50mA and collector current of 500mA. The transition frequency is 250MHz, suitable for low to medium frequency circuits.

 

The device is housed in a through-hole TO-205AD / TO-39-3 metal can package (supplier device package TO-39) and features unlimited (1) moisture sensitivity level.

2N2219A Quick Information

Product Type: Bipolar (BJT) Single Transistor
Canonical Name: 2N2219A NPN Bipolar Transistor
Subcategory: Single

2N2219A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2219A Features

  • NPN bipolar junction transistor design.
  • 30V collector-emitter breakdown voltage.
  • 800mA continuous collector current rating.
  • 250MHz transition frequency for medium-speed applications.
  • TO-39 metal can through-hole package.

2N2219A Applications

  • General-purpose switching and amplification circuits.
  • Low to medium frequency signal processing.
  • Driver stages in power management systems.
  • Industrial control and automation equipment.

2N2219A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N2219A?

The collector-emitter breakdown voltage (Vceo) is 30V.

What is the maximum collector current for this transistor?

The maximum continuous collector current (Ic) is 800mA.

What is the power dissipation rating of the 2N2219A?

The maximum power dissipation is 800mW.

What is the package type for the 2N2219A?

It is available in a through-hole TO-205AD / TO-39-3 metal can package (supplier device package TO-39).

What is the operating temperature range?

The maximum operating junction temperature is 175°C.

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