| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
239 pcs
|
239 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Military Grade | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2219A is a general-purpose NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for amplification and switching applications in through-hole assemblies.
The transistor offers a maximum collector-emitter voltage (Vce) of 40V and a maximum collector current (Ic) of 800mA. It has a DC current gain (hFE) of at least 100 at 150mA, 10V, and a maximum Vce saturation voltage of 1V at 50mA base current and 500mA collector current. Power dissipation is rated at 800mW.
The device is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting. The supplier device package is TO-39. This robust metal can enclosure provides good thermal performance and mechanical stability.
| Qty | Low | High |
|---|---|---|
| 10,000+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40V.
It is available in a TO-205AD / TO-39-3 metal can package with through-hole mounting. The supplier device package is TO-39.
Maximum 800 mA.
Maximum 800 mW.
Minimum of 100 at 150mA, 10V.
Maximum 1V at 50mA base current, 500mA collector current.
Through hole.