SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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87 pcs
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87 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2219A is a silicon NPN transistor manufactured using the epitaxial planar process, suitable for small signal general purpose and switching applications. It is available in both TO-5 and TO-39 package types.
Key electrical characteristics include a maximum collector-base voltage of 75V and a maximum collector-emitter voltage of 40V. The continuous collector current is rated at 800mA. Power dissipation is 800mW at 25°C ambient temperature, and can be increased to 3W when the case temperature is 25°C.
Operating and storage junction temperatures range from -65°C to +200°C. The transistor exhibits a minimum DC current gain (hFE) of 35 at 10V collector-emitter voltage and 100μA collector current, and up to 100-300 at 150mA collector current. Its transition frequency (fT) is 300MHz at 20V collector-emitter voltage and 20mA collector current.
This transistor is designed for through-hole mounting. Its specifications make it a versatile component for various electronic circuits requiring amplification or switching functionalities.
| Qty | Low | High |
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| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2N2219A is 40V.
The maximum continuous collector current for the 2N2219A is 800mA.
The 2N2219A is available in TO-5 and TO-39 package types.
The operating and storage junction temperature range for the 2N2219A is -65°C to +200°C.
