2N2219 The 2N2219 is an NPN switching silicon transistor rated for 30V collector-emitter voltage and 0.8A collector current, housed in a through-hole TO-39 metal can package.
Mfr Part #:

2N2219

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
The 2N2219 is an NPN switching silicon transistor rated for 30V collector-emitter voltage and 0.8A collector current, housed in a through-hole TO-39 metal can package.
Total Stock: 2,150 pcs
$ Price Range: $3.11

2N2219 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
150 pcs
150 pcs On Request 1 On Request On Request On Request On Request On Request

2N2219 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Collector-Emitter Saturation Voltage (VCE(sat)) (Maximum @ IB=15 mA, IC=150 mA)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ IC=0.1 mA, VCE=10 V)
DC Current Gain (hFE) (Minimum @ IC=500 mA, VCE=10 V)
DC Current Gain (hFE) (Minimum/Maximum @ IC=1 mA, VCE=10 V)
DC Current Gain (hFE) (Minimum/Maximum @ IC=150 mA, VCE=10 V)
Emitter-Base Voltage (VEBO)
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Supplier Device Package
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
dc_current_gain_hFE (Minimum @ IC = 10 mA, VCE = 10 V)

2N2219 Description

Short technical summary and product information.

The 2N2219 is a qualified NPN switching silicon transistor manufactured by Microchip Technology (formerly Microsemi). It is designed for general-purpose switching and amplification applications.

 

Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 30V, a maximum collector current (IC) of 0.8A, and a total power dissipation of 0.8W at 25°C ambient temperature (3W at 25°C case temperature). The device offers a DC current gain (hFE) ranging from 35 minimum at 0.1mA to 300 maximum at 150mA, with a minimum of 30 at 500mA.

 

The transistor is packaged in a TO-205AD (TO-39-3 Metal Can) through-hole package, suitable for socket or direct solder mounting. It operates over a junction temperature range of -55°C to +200°C. The part is listed as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.

2N2219 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N2219 NPN Switching Silicon Transistor
Subcategory: Single Bipolar Transistors

2N2219 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2219 Estimated Pricing

Qty Low High
1+ $3.11 $3.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2219 Features

  • NPN silicon switching transistor design.
  • 30V maximum collector-emitter voltage.
  • 0.8A maximum collector current rating.
  • Through-hole TO-39 metal can package.
  • Operating temperature range -55°C to +200°C.

2N2219 Applications

  • General purpose switching circuits.
  • Medium-current linear amplification.
  • Signal processing in industrial controls.

2N2219 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2N2219?

30V

What is the maximum collector current (IC) rating?

0.8A

What package does the 2N2219 come in?

TO-205AD (TO-39-3 Metal Can), through-hole mounting.

What is the operating temperature range?

-55°C to +200°C (junction temperature).

Is the 2N2219 RoHS compliant?

Listed as RoHS3 compliant, but this is unverified.

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