| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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585 pcs
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585 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
324 pcs
|
324 pcs | On Request | 1 | On Request | On Request | 98+ | On Request | On Request |
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The 2N2218 from STMicroelectronics is a silicon NPN transistor manufactured using the epitaxial planar process. It is designed for small signal general purpose and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 800mA. The transistor offers a transition frequency (fT) of 250MHz and a DC current gain (hFE) ranging from 40 to 120 at 150mA collector current.
This device is housed in a TO-39 case and is suitable for through-hole mounting. The operating and storage junction temperature range is from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 30V.
The continuous collector current (IC) is 800mA maximum.
The 2N2218 is available in a TO-39 package.
The operating and storage junction temperature range is -65°C to +200°C.
The transition frequency (fT) is 250MHz minimum at VCE=20V and IC=20mA.
The DC current gain (hFE) ranges from 40 to 120 at VCE=10V and IC=150mA.