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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor Corp 2N2102 is a silicon NPN epitaxial planar transistor designed for high current general purpose switching applications. It offers a Collector-Emitter Voltage (VCEO) of 65V and a continuous Collector Current (IC) of 1.0A.
Key electrical characteristics include a maximum Collector-Emitter Saturation Voltage (VCE(SAT)) of 0.5V at 150mA/15mA and a minimum DC Current Gain (hFE) ranging from 40 to 200 at 150mA. The transition frequency (fT) is 60MHz at 10V and 50mA.
This transistor operates within a wide temperature range of -65°C to +200°C. The TO-39 package is suitable for various through-hole mounting applications.
Maximum ratings include a Collector-Base Voltage (VCBO) of 120V and a Power Dissipation (PD) of 5.0W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) is 120V.
The continuous collector current (IC) is rated at 1.0A.
The power dissipation (PD) is 5.0W at 25°C case temperature.
The operating and storage junction temperature range is -65°C to +200°C.
The 2N2102 transistor comes in a TO-39 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.