Mfr Part #:

2N2102

The 2N2102 is an NPN silicon epitaxial planar transistor designed for high current general purpose switching applications. It offers a maximum collector-emitter voltage of 65V and continuous collector current of 1A.

✓ Total Stock: 958 pcs

$ Price Range: $0.54

2N2102 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Husky International Electronic ✓ Non-Authorised Inventory information	496 pcs On Request	496 pcs	On Request	1	On Request	On Request	N/A	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	462 pcs On Request	462 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N2102 Description

Short technical summary and product information.

The 2N2102 is an NPN silicon epitaxial planar transistor from Central Semiconductor, designed for high current general purpose switching and amplifier applications.

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 65V, a maximum collector-base voltage (VCBO) of 120V, and a continuous collector current rating of 1A. The device features a DC current gain (hFE) of 40 minimum at 150mA, with a minimum transition frequency (fT) of 60 MHz. Saturation voltage (VCE(SAT)) is 0.5V maximum at 150mA.

This transistor is housed in a TO-39 metal can package (TO-205AD) with through-hole mounting, enabling easy integration into a wide range of circuits. The operating junction temperature range is -65°C to +200°C, with a maximum power dissipation of 1W at 25°C ambient or 5W at 25°C case temperature.

2N2102 Quick Information

Product Type: Bipolar Junction Transistor

Series: 2N2102

Canonical Name: 2N2102 NPN Silicon Epitaxial Planar Transistor

Subcategory: General Purpose Switching Transistor

2N2102 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N2102 Estimated Pricing

Qty	Low	High
1,500+	$0.54	$0.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2102 Features

NPN silicon epitaxial planar transistor.
Maximum collector current of 1A.
Collector-emitter voltage rating of 65V.
Transition frequency of 60 MHz minimum.
TO-39 through-hole metal can package.

2N2102 Applications

High current general purpose switching circuits.
Medium power amplifier stages.
Relay and solenoid driver applications.
Signal amplification up to 60 MHz.

2N2102 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum collector current of the 2N2102?

The maximum continuous collector current is 1A.

What is the package type of the 2N2102?

The 2N2102 comes in a TO-39 metal can package (TO-205AD) with through-hole mounting.

What is the operating junction temperature range?

The junction temperature range is -65°C to +200°C.

What is the DC current gain of the 2N2102?

The minimum hFE is 40 at Vce=10V, Ic=150mA, with a maximum of 200.

What is the transition frequency of the 2N2102?

The minimum transition frequency (fT) is 60 MHz at Vce=10V, Ic=50mA.

Is the 2N2102 RoHS compliant?

RoHS status is reported as compliant but is unverified due to conflicting distributor information.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	STMicroelectronics
Current	1 A
DC Current Gain (hFE) (Min) @ Ic, Vce	40
Military Grade	Yes
Mounting Type	Through Hole
Operating Temperature	175°C (TJ)
Power	1 W
Storage Temperature	-65°C ~ 175°C
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500mV @ 15mA, 150mA
Voltage	65 V