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2N2102 The 2N2102 is a PNP bipolar junction transistor rated for 65V VCEO and 1A continuous collector current. Housed in a TO-5 metal can package.
Mfr Part #:

2N2102

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N2102 is a PNP bipolar junction transistor rated for 65V VCEO and 1A continuous collector current. Housed in a TO-5 metal can package.
✓ Total Stock: 40 pcs
$ Price Range: $28.74

2N2102 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
40 pcs
On Request
40 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N2102 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Emitter Voltage (Maximum @ RBE=10Ω)
Collector-Base Voltage (VCBO)
Collector-Emitter Saturation Voltage (Vce Sat)
Current
DC Current Gain (hFE)
Emitter-Base Voltage (VEBO)
Input Capacitance (Cib)
Mounting Type
Noise Figure (NF)
Operating and Storage Junction Temperature
Output Capacitance (Cob)
Power
Power Dissipation (Maximum) @ TA=25°C
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Transition Frequency (fT)
Voltage
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2N2102 Description

Short technical summary and product information.

The 2N2102 is a PNP silicon epitaxial planar transistor designed for general purpose switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 65V and a continuous collector current rating of 1A.

 

With a power dissipation of 5W at case temperature 25°C and 1W at ambient, the device offers a DC current gain (hFE) range of 40 to 200 at VCE=10V, IC=150mA. The transition frequency is 60 MHz minimum, making it suitable for moderate-speed switching circuits.

 

The transistor is supplied in a TO-5 (TO-205AA) metal can package with through-hole mounting. It is rated for an operating junction temperature range of -65°C to +200°C.

2N2102 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N2102 PNP Bipolar Transistor
Subcategory: General Purpose BJT

2N2102 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N2102 Estimated Pricing

Qty Low High
1+ $28.74 $28.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N2102 Features

  • 65V collector-emitter breakdown voltage.
  • 1A continuous collector current rating.
  • 5W power dissipation at case temperature.
  • 60 MHz minimum transition frequency.
  • TO-5 metal can through-hole package.

2N2102 Applications

  • General purpose switching circuits.
  • Linear amplifier stages.
  • Medium power driver applications.
  • Signal amplification in audio circuits.

2N2102 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N2102?

The maximum collector-emitter voltage (VCEO) is 65V.

What is the continuous collector current rating?

The maximum continuous collector current is 1A.

What package is the 2N2102 available in?

The 2N2102 is available in a TO-5 (TO-205AA) metal can package with through-hole mounting.

What is the operating junction temperature range?

The operating and storage junction temperature range is -65°C to +200°C.

What is the DC current gain (hFE) of the 2N2102?

The DC current gain (hFE) ranges from 40 to 200 at VCE=10V, IC=150mA.

What is the transition frequency of the 2N2102?

The minimum transition frequency (fT) is 60 MHz at VCE=10V, IC=50mA.

What is the thermal resistance junction-to-ambient?

The maximum thermal resistance from junction to ambient is 175°C/W.

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