| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2102 is a PNP silicon epitaxial planar transistor designed for general purpose switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 65V and a continuous collector current rating of 1A.
With a power dissipation of 5W at case temperature 25°C and 1W at ambient, the device offers a DC current gain (hFE) range of 40 to 200 at VCE=10V, IC=150mA. The transition frequency is 60 MHz minimum, making it suitable for moderate-speed switching circuits.
The transistor is supplied in a TO-5 (TO-205AA) metal can package with through-hole mounting. It is rated for an operating junction temperature range of -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $28.74 | $28.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 65V.
The maximum continuous collector current is 1A.
The 2N2102 is available in a TO-5 (TO-205AA) metal can package with through-hole mounting.
The operating and storage junction temperature range is -65°C to +200°C.
The DC current gain (hFE) ranges from 40 to 200 at VCE=10V, IC=150mA.
The minimum transition frequency (fT) is 60 MHz at VCE=10V, IC=50mA.
The maximum thermal resistance from junction to ambient is 175°C/W.