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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Emitter Voltage (Maximum @ RBE=10Ω) | |
| Collector-Base Capacitance (Cob) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ Vce=10 V, Ic=1.0 A) | |
| DC Current Gain (Minimum @ Vce=10 V, Ic=10 mA) | |
| DC Current Gain (Minimum @ Vce=10 V, Ic=10 µA) | |
| DC Current Gain (Minimum @ Vce=10 V, Ic=100 µA) | |
| DC Current Gain (Minimum @ Vce=10 V, Ic=500 mA) | |
| DC Current Gain (Minimum/Maximum @ Vce=10 V, Ic=150 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Capacitance (Cib) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Noise Figure (NF) | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Supplier Device Package | |
| Transistor Type | |
| Vbe Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N2102 is a silicon NPN epitaxial planar bipolar junction transistor designed for high-current general-purpose switching and amplification. It features a maximum collector-emitter voltage (VCEO) of 65V and a continuous collector current rating of 1A. The device is housed in a hermetic TO-205AD (TO-39) through-hole metal can package, offering robust thermal performance with a maximum power dissipation of 1.0W at 25°C ambient and 5.0W at 25°C case temperature.
Electrical characteristics include a DC current gain (hFE) of 40-200 at 150mA and 10V, with a transition frequency (fT) of 60 MHz. Saturation voltage (VCE(sat)) is 0.5V maximum at 150mA collector current and 15mA base current. The device operates over a junction temperature range of -65°C to +200°C, making it suitable for demanding environments.
Typical applications include switching regulators, power drivers, and general-purpose amplifier stages where moderate voltage and current handling are required. The TO-39 package provides excellent heat dissipation and reliability for industrial and military-grade designs.
The maximum VCEO is 65V.
It is supplied in a TO-205AD / TO-39-3 metal can through-hole package (supplier device package TO-39).
The junction temperature range is -65°C to +200°C.
RoHS status is reported as RoHS3 Compliant, but this is unverified and there is a conflict between distributors.
The hFE at VCE=10V, IC=150mA has a minimum of 40 and a maximum of 200.
The transition frequency (fT) is 60 MHz minimum at VCE=10V, IC=50mA, f=20MHz.