SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2060 from Motorola Semiconductor is a matched dual NPN silicon transistor housed in a hermetically sealed TO-77 metal package. This low-power device is suitable for various electronic applications requiring matched transistor characteristics.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 60V, a Collector Current (IC) of up to 500mA per side, and a total power dissipation of 1.5W for the device. The transistor operates within a junction and storage temperature range of -65°C to +200°C.
With a DC Current Gain (HFE) typically ranging from 50 to 150, and a Current Gain Bandwidth Product (FT) of 60MHz, the 2N2060 offers reliable performance for signal amplification and switching tasks. The TO-77 package is designed for through-hole mounting, making it suitable for traditional PCB assembly.
High reliability screening options are available for applications demanding stringent performance standards. This transistor is a component within the Discrete Semiconductor Products category, specifically in Transistors - Bipolar (BJT) - Arrays, Pre-Biased.
| Qty | Low | High |
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| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N2060 is 60V.
The continuous collector current rating for the 2N2060 is 500mA per side.
The 2N2060 uses a hermetically sealed TO-77 metal package.
The operating temperature range for the 2N2060 is -65°C to +200°C.
The DC Current Gain (HFE) for the 2N2060 is a minimum of 50 and a maximum of 150 when tested at IC = 50mA and IB = 5mA.
The Current Gain Bandwidth Product (FT) of the 2N2060 is a minimum of 60MHz.
