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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2060 from SP is a matched dual NPN silicon transistor designed for low power applications. Encased in a hermetically sealed TO-77 metal package, this component offers high reliability.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of up to 500mA per side. The device features a DC current gain (HFE) ranging from 50 to 150 and a current gain bandwidth product (FT) of 60MHz minimum at 50mA collector current and 10V VCE.
With a junction temperature range of -65°C to +200°C and a storage temperature range also from -65°C to +200°C, the 2N2060 is suitable for demanding environments. The TO-77 package is through-hole mounted, making it suitable for various assembly processes.
This transistor is specified for applications requiring matched dual NPN characteristics. Its robust construction and reliable performance make it a suitable choice for designs where precise transistor matching is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N2060 is 60V.
The continuous collector current (IC) for the 2N2060 is 500mA per side.
The 2N2060 transistor is supplied in a TO-77 metal package.
The junction and storage temperature range for the 2N2060 is -65°C to +200°C.
The minimum current gain bandwidth product (FT) for the 2N2060 is 60MHz.
The DC current gain (HFE) for the 2N2060 ranges from a minimum of 50 to a maximum of 150.
The maximum collector-emitter saturation voltage (VCE(sat)) for the 2N2060 is 0.6V.