| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1990 is an NPN bipolar transistor manufactured by STMicroelectronics, suitable for amplifier and switch applications. It is housed in a TO-39 package.
Key electrical characteristics include a maximum Collector-Emitter Voltage (V CEO) of 60V and a maximum Collector-Base Voltage (V CBO) of 100V. The maximum Emitter-Base Voltage (V EBO) is 3V. The device can handle a continuous Collector Current (I C) of up to 20mA at a Collector-Emitter Voltage of 10V. The Collector Cutoff Current (I CBO) is a maximum of 10μA at 10V.
With a typical DC Current Gain (hFE) of 75 at 10mA and 10V, and a typical transition frequency (f T) of 30MHz, the 2N1990 is designed for general-purpose amplification tasks. The Collector-Emitter Saturation Voltage (VCE(SAT)) is a maximum of 0.5V at 10mA, indicating efficient switching capabilities. The maximum power dissipation (P D) is rated at 2W.
This transistor also features typical rise and fall times of 40ns and 20ns, respectively, contributing to its suitability in switching circuits. The TO-39 package is a common metal can package, often used for discrete transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V CEO) for the 2N1990 is 60V.
The 2N1990 has a maximum collector current (I C) of 20mA.
The typical DC current gain (hFE) for the 2N1990 is 75.
The 2N1990 transistor is supplied in a TO-39 package.