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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 65+ | On Request | On Request |
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The 2N1937 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ISSI. This silicon transistor is housed in a TO-63 package, designed for post/stud mount applications.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 80V and a maximum collector current (Ic) of 20A. It has a minimum DC current gain (hFE) of 10 and a maximum power dissipation of 150W at ambient temperature. The transistor also features a minimum transition frequency (ft) of 4.0 MHz and a maximum collector-emitter saturation voltage (Vce_sat) of 0.75V.
With its NPN polarity and silicon construction, the 2N1937 is suitable for various power switching and amplification tasks in industrial and general electronic circuits. Its TO-63 metal package provides effective heat dissipation for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
20A.
150W at ambient temperature.
NPN silicon general purpose transistor.
TO-63 metal package with stud mount.
Minimum 10.
4.0 MHz.