| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The CENTRAL SEMICONDUCTOR 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. It is housed in a TO-39 case.
Key electrical characteristics include a Collector-Base Voltage (VCBO) of 120V, a Collector-Emitter Voltage (VCEO) of 80V, and a continuous collector current (IC) of up to 500mA. The transistor offers a DC Current Gain (hFE) ranging from 35 to 200 depending on the operating conditions. Its transition frequency (fT) is 50 MHz at 10V and 50mA.
Maximum power dissipation is rated at 3.0W when the case temperature is 25°C, and 0.8W under free air conditions. The operating and storage junction temperature range is from -65°C to +200°C.
This transistor is suitable for various general-purpose switching applications where small signal amplification is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage for the 2N1893 is 120 V.
The maximum Continuous Collector Current for the 2N1893 is 500 mA.
The power dissipation of the 2N1893 is 0.8 W, and 3.0 W when TC=25°C.
The operating and storage junction temperature range for the 2N1893 is -65 to +200 °C.
The 2N1893 is supplied in a TO-39 package.
The minimum DC Current Gain (hFE) is 35 at VCE=10V, IC=10mA.
The minimum Transition Frequency (fT) is 50 MHz at VCE=10V, IC=50mA, f=20MHz.