| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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56 pcs
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56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1893 is a silicon planar epitaxial NPN bipolar junction transistor manufactured by STMicroelectronics. It is housed in a JEDEC TO-39 metal can package and designed for general-purpose high-voltage applications including amplifiers, oscillators, and switching circuits.
Key electrical specifications include a minimum collector-emitter breakdown voltage (VCEO) of 80V, a minimum collector-base breakdown voltage (VCBO) of 120V, and a maximum collector current of 0.5A. The device offers a DC current gain (hFE) of 40 minimum at 150mA collector current and a typical transition frequency of 70MHz. Saturation voltage is 5V maximum at 150mA collector current.
The transistor can dissipate up to 0.8W at 25°C ambient temperature and up to 3W at 25°C case temperature. The maximum operating junction temperature is 175°C. The device is through-hole mounted and has a 3-pin TO-39 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $68.59 | $68.59 |
| 200+ | $26.54 | $26.54 |
| 500+ | $25.61 | $25.61 |
| 1,000+ | $25.15 | $25.15 |
| 1,500+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is 80V at IB=0 and IC=10mA.
The maximum collector current is 0.5A.
The 2N1893 is available in a TO-205AD, TO-39-3 Metal Can package (through-hole mounting).
The maximum operating junction temperature is 175°C. The storage temperature range is -65 to 175°C.
The minimum DC current gain (hFE) is 40 at IC=150mA and VCE=10V.
The typical transition frequency (fT) is 70MHz at IC=50mA and VCE=10V.
The maximum junction-to-case thermal resistance is 50°C/W, and the maximum junction-to-ambient thermal resistance is 187.5°C/W.