| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SIG 2N1718 is a silicon NPN power bipolar junction transistor (BJT) suitable for various electronic applications. It features a minimum collector-emitter breakdown voltage of 60V and an absolute maximum collector current of 750mA. The device can dissipate up to 2.0W of power.
This transistor is housed in a StR-10 package and is designed for through-hole mounting. Key electrical characteristics include a minimum current gain (hFE) of 20 and a maximum current gain of 60. The transition frequency (fT) is a minimum of 16MHz.
Additional specifications include a maximum collector-base breakdown voltage of 90V and a maximum collector-emitter saturation voltage of 2.0V. The output capacitance (Cobo) is a maximum of 50pF.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is 60V.
The absolute maximum collector current (I(C) Abs.) is 750mA.
The absolute maximum power dissipation is 2.0W.
The minimum static current gain (hFE) is 20.
The minimum transition frequency (fT) is 16MHz.
The package code is StR-10.