LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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96 pcs
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96 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1718 is a silicon NPN power bipolar junction transistor (BJT) manufactured by Texas Instruments. It is designed for general-purpose applications requiring moderate power handling capabilities.
Key electrical characteristics include a minimum collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 750mA. The device exhibits a minimum static current gain (hFE) of 20 and a maximum of 60. Its transition frequency (fT) is a minimum of 16MHz.
The transistor has a maximum power dissipation of 2W and a collector-emitter saturation voltage of 2V maximum. The StR-10 package is suitable for through-hole mounting.
This component is categorized under Discrete Semiconductor Products, specifically within the Transistors - Bipolar (BJT) - Single, Pre-Biased subcategory.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) for the 2N1718 is 60V.
The maximum continuous collector current (I(C) Abs.) for the 2N1718 is 750mA.
The minimum transition frequency (fT) for the 2N1718 is 16MHz.
The 2N1718 is supplied in the StR-10 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
