2N1711S 2N1711S is an NPN bipolar junction transistor from Microchip Technology. It features a 30V collector-emitter voltage, 500mA collector current, and 800mW power dissipation in a TO-39 through-hole package.
Mfr Part #:

2N1711S

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
2N1711S is an NPN bipolar junction transistor from Microchip Technology. It features a 30V collector-emitter voltage, 500mA collector current, and 800mW power dissipation in a TO-39 through-hole package.
Total Stock: 2,336 pcs
$ Price Range: $23.88

2N1711S Available from 1 distributor

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2N1711S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N1711S Description

Short technical summary and product information.

The 2N1711S is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general purpose switching and amplification applications. Key electrical specifications include a maximum collector-emitter voltage (Vce) of 30V, a maximum collector current (Ic) of 500mA, and a maximum power dissipation (Pd) of 800mW. The transistor offers a minimum DC current gain (hFE) of 100 at Ic=150mA and Vce=10V, with a maximum Vce saturation voltage of 1.5V at Ib=15mA and Ic=150mA. It operates over a wide junction temperature range of -65°C to 200°C. The device is housed in a TO-205AD / TO-39-3 metal can package and is designed for through-hole mounting. The supplier device package is TO-39. The part is listed as RoHS3 compliant, with an MSL of 1 (unlimited) and REACH unaffected status.

2N1711S Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N1711S NPN Bipolar Transistor, TO-39
Subcategory: Single

2N1711S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N1711S Estimated Pricing

Qty Low High
1+ $23.88 $23.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N1711S Features

  • NPN bipolar junction transistor.
  • 30V collector-emitter voltage rating.
  • 500mA maximum collector current.
  • 800mW power dissipation capability.
  • TO-39 through-hole metal can package.

2N1711S Applications

  • General purpose switching and amplification.
  • Suitable for through-hole PCB designs.
  • Ideal for low to medium power circuits.

2N1711S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The maximum collector-emitter voltage (Vce) is 30V.

What package does the 2N1711S come in?

It is available in a TO-205AD / TO-39-3 metal can package, with a supplier device package of TO-39.

What is the operating temperature range?

The operating temperature range is -65°C to 200°C (junction).

Is the 2N1711S RoHS compliant?

The part is listed as RoHS3 compliant.

What is the DC current gain (hFE)?

The minimum DC current gain is 100 at Ic=150mA, Vce=10V.

What is the Vce saturation voltage?

The maximum Vce saturation is 1.5V at Ib=15mA, Ic=150mA.

What is the mounting type?

Through-hole mounting.

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