SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1711 is a general-purpose NPN silicon planar transistor manufactured by Continental Device India Ltd (CDIL). It features a TO-39 metal can package, suitable for through-hole mounting.
Key electrical characteristics include a Collector Emitter Voltage (VCER) of 50V, a Collector Base Voltage (VCBO) of 75V, and an Emitter Base Voltage (VEBO) of 7.0V. The DC Current Gain (hFE) ranges from a minimum of 20 at low currents to a maximum of 300 at 150mA. Saturation voltages are low, with VCE(sat) at 0.5V and VBE(sat) at 1.3V under specified test conditions.
This transistor operates effectively across a wide temperature range, from -65°C to +200°C. Its transition frequency (fT) is 70MHz, and it has output capacitance (Cob) of 25pF and input capacitance (Cib) of 80pF. The device is rated for a maximum power dissipation of 800mW at 25°C ambient temperature and 3W at 25°C case temperature.
This transistor is also available in Defence/Military, JanXXX, and Hirel grades, indicating its suitability for demanding applications. The TO-39 package is a standard metal can package known for its robustness and thermal performance.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage (VCER) for the 2N1711 is 50V.
The 2N1711 has a maximum DC current gain (hFE) of 300 when tested at IC=150mA and VCE=10V.
The 2N1711 transistor can operate in a temperature range from -65°C to +200°C.
The 2N1711 transistor is supplied in a TO-39 metal can package.
The transition frequency (fT) of the 2N1711 is 70MHz when tested at IC=50mA and VCE=10V.
