| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Noise Figure |
The 2N1711 is a general-purpose NPN Silicon Planar Transistor manufactured by Thomson-CSF. It is housed in a TO-39 metal can package, suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter voltage (VCER) of 50V, a collector-base voltage (VCBO) of 75V, and an emitter-base voltage (VEBO) of 7.0V. The DC current gain (hFE) ranges from a minimum of 20 at low currents to a maximum of 300 at 150mA. Saturation voltages are VCE(sat) of 0.5V and VBE(sat) of 1.3V at 150mA.
For small signal applications, the transition frequency (fT) is 70MHz. Output capacitance (Cob) is 25pF, and input capacitance (Cib) is 80pF. The transistor exhibits an input impedance (hib) between 24-34 Ohms at 1mA and 4.0-8.0 Ohms at 5mA. Small signal current gain (hfe) ranges from 50-200 at 1mA and 70-300 at 5mA.
Thermal specifications include a power dissipation of 800mW at 25°C ambient and 3.0W at 25°C case temperature. The operating and storage junction temperature range is -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCER) for the 2N1711 is 50V.
The 2N1711 has a maximum DC current gain (hFE) of 300 at IC=150mA, VCE=10V.
The transition frequency (fT) for the 2N1711 is a minimum of 70MHz at IC=50mA, VCE=10V.
The 2N1711 is available in a TO-39 metal can package.
The operating and storage junction temperature range for the 2N1711 is -65°C to +200°C.