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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,150 pcs
|
1150 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
450 pcs
|
450 pcs | On Request | 40 | On Request | On Request | On Request | On Request | On Request | |
|
155 pcs
|
155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
29 pcs
|
29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Emitter Breakdown Voltage (Minimum @ I_C = 30 mA) | |
| Collector Emitter Breakdown Voltage (Minimum @ R_BE = 10 Ω, I_C = 100 µA) | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (Minimum @ I_C = 10 mA, V_CE = 10 V) | |
| DC Current Gain (Minimum @ I_C = 500 mA, V_CE = 10 V) | |
| DC Current Gain (Minimum/Maximum @ I_C = 150 mA, V_CE = 10 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating & Storage Junction Temperature Range | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ T_A = +25 °C) | |
| Power Dissipation (Maximum @ T_C = +25 °C) | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Impedance | |
| Transistor Type | |
| Turn-On Time + Turn-Off Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N1711 is a NPN silicon transistor designed for low-power switching and amplification applications. It is qualified per MIL-PRF-19500/225, ensuring reliability for military and industrial use. The transistor features a minimum collector-emitter breakdown voltage of 50V (with R_BE = 10Ω) and a collector-base breakdown voltage of 75V.
Electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at 150mA collector current, and a minimum of 20 at 10mA. The collector-emitter saturation voltage is typically 1.5V maximum at 150mA collector current with 15mA base current. The device can handle a maximum collector current of 500mA and a total power dissipation of 0.8W (at 25°C ambient) or 3W (at 25°C case temperature).
The transistor is packaged in a TO-205AD/TO-39-3 metal can, which is a through-hole mounting style. The operating junction temperature range is -65°C to +200°C, with a maximum thermal impedance of 58°C/W for the TO-5 package. The switching time (turn-on plus turn-off) is 30μs maximum, making it suitable for moderate-speed switching circuits.
| Qty | Low | High |
|---|---|---|
| 1,500+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N1711 is available in a TO-205AD / TO-39-3 metal can package, with a through-hole mounting style. The supplier device package is TO-39.
The operating and storage junction temperature range is -65°C to +200°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and conflicts with distributor data that states it is not RoHS compliant. Confidence is low.
The maximum collector current is 500 mA.
The DC current gain (hFE) at I_C = 150 mA and V_CE = 10 V is 100-300.
The collector-emitter saturation voltage is 1.5 V maximum at I_C = 150 mA and I_B = 15 mA.
The maximum power dissipation is 0.8 W at 25°C ambient temperature.