| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N167A JAN from GE is a single, pre-biased bipolar junction transistor (BJT) designed for various electronic applications. This component adheres to RoHS3 compliance standards, indicating its suitability for environmentally conscious designs. It also meets Moisture Sensitivity Level 1 (MSL 1) requirements, signifying unlimited shelf life under recommended storage conditions, and is REACH unaffected.
As a pre-biased transistor, the 2N167A JAN simplifies circuit design by including integrated base resistors, reducing component count and board space. Its specific electrical characteristics and operating parameters would typically be detailed in a datasheet, providing engineers with the necessary information for integration into circuits requiring stable amplification or switching functions.
This transistor is categorized under Discrete Semiconductor Products, specifically within the Transistors - Bipolar (BJT) - Single, Pre-Biased segment. Its availability and specifications make it a candidate for applications where reliable performance and compliance are key considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N167A JAN transistor is RoHS3 Compliant.
The MSL for the 2N167A JAN is Level 1 Unlimited.
The 2N167A JAN is REACH Unaffected.