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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The GE 2N1671B is a PN bar-type silicon unijunction transistor mounted in a TO-5 metal package. It is designed for medium power switching, oscillator, and pulse timing circuits. Key specifications include a maximum emitter current of 50 mA, a maximum junction temperature of 150°C, and RoHS3 compliance. Its high pulse current capabilities and stable negative resistance make it suitable for various electronic switching and timing applications. The device's package allows for easy mounting in standard circuit designs, and its electrical characteristics support reliable operation in industrial and consumer electronics.
The transistor's electrical parameters, such as a maximum interbase voltage of 35 V and a maximum emitter-collector voltage of 30 V, ensure safe operation within specified limits. Its low emitter saturation voltage of 5 V and intrinsic stand-off ratio between 0.47 and 0.62 contribute to its efficiency in pulse and oscillator circuits. The TO-5 metal package provides durability and effective heat dissipation, making it suitable for applications requiring medium power handling and high pulse capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum emitter current is 50 mA.
Yes, it is RoHS3 compliant.
It comes in a TO-5 metal package.
The maximum junction temperature is 150°C.