| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The 2N1613 is a silicon planar epitaxial NPN bipolar junction transistor manufactured by STMicroelectronics. It is housed in a JEDEC TO-39 metal can package and is designed for use in high-performance amplifier, oscillator, and switching circuits.
Key electrical specifications include a collector-emitter breakdown voltage of 50V (minimum, with RBE ≤ 10 Ω), a collector-base breakdown voltage of 75V, and an emitter-base breakdown voltage of 7V. The maximum collector current is 500mA, and the device can dissipate up to 800mW at 25°C ambient temperature. DC current gain (hFE) ranges from 20 to 120 depending on operating conditions, with a typical gain of 80 at 150mA and 10V. The transition frequency is typically 80MHz, and the maximum collector-base capacitance is 25pF.
The 2N1613 is suitable for general-purpose amplification and switching applications. Its through-hole TO-39 package allows for easy mounting on printed circuit boards. The device operates over a junction temperature range of -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 50V, tested with RBE ≤ 10 Ω and IC = 10 mA.
The maximum collector current is 500 mA.
The 2N1613 is available in a TO-205AD, TO-39-3 metal can package (through-hole mounting).
The operating junction temperature range is -65°C to 200°C.
At IC = 150 mA and VCE = 10 V, the minimum hFE is 40, typical is 80, and maximum is 120.
The transition frequency is typically 80 MHz, with a minimum of 60 MHz, tested at IC = 50 mA, VCE = 10 V, f = 20 MHz.
The maximum power dissipation is 800 mW at 25°C ambient temperature.