2N1485 2N1485 is an NPN bipolar junction transistor from Microchip Technology with maximum collector-emitter voltage of 40V, collector current of 3A, and power dissipation of 1.75W in a TO-8 through-hole package.
Mfr Part #:

2N1485

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
2N1485 is an NPN bipolar junction transistor from Microchip Technology with maximum collector-emitter voltage of 40V, collector current of 3A, and power dissipation of 1.75W in a TO-8 through-hole package.
✓ Total Stock: 3,600 pcs
$ Price Range: $51.97

2N1485 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

2N1485 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N1485 Description

Short technical summary and product information.

The 2N1485 is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.

 

Key electrical specifications include a maximum collector-emitter voltage (Vce) of 40V, a maximum collector current (Ic) of 3A, and a maximum power dissipation of 1.75W. The DC current gain (hFE) is a minimum of 35 at a test condition of 750mA collector current and 4V collector-emitter voltage. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 750mV at a base current of 40mA and collector current of 750A.

 

The transistor is housed in a TO-233AA / TO-8-3 metal can package and is designed for through-hole mounting. The operating junction temperature range is -65°C to 200°C, making it suitable for demanding thermal environments.

2N1485 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N1485 NPN Bipolar Transistor
Subcategory: Single BJT

2N1485 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N1485 Estimated Pricing

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1+ $51.97 $51.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N1485 Features

  • NPN bipolar junction transistor design.
  • Maximum collector-emitter voltage of 40V.
  • Maximum collector current rating of 3A.
  • Power dissipation up to 1.75W.
  • Through-hole TO-8 metal can package.

2N1485 Applications

  • General purpose switching circuits.
  • Linear amplification applications.
  • Medium power driver stages.
  • Industrial control systems.

2N1485 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N1485?

The maximum collector-emitter voltage (Vce) is 40V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 3A.

What is the package type of the 2N1485?

The 2N1485 is available in a TO-233AA / TO-8-3 metal can package, with a supplier device package of TO-8. It is a through-hole mounting type.

What is the operating temperature range?

The operating junction temperature range is -65°C to 200°C.

What is the DC current gain (hFE) of the 2N1485?

The minimum DC current gain (hFE) is 35 at a test condition of 750mA collector current and 4V collector-emitter voltage.

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (Vce(sat)) is 750mV at a base current of 40mA and collector current of 750A.

Is the 2N1485 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and may conflict with other sources.

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