| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1307 is a Germanium PNP bipolar junction transistor (BJT) manufactured by SESCOCEM. This component is housed in a standard TO-5 metal can package, making it suitable for through-hole mounting.
As a Germanium transistor, the 2N1307 offers specific electrical characteristics that may be advantageous in certain applications, particularly where lower voltage drops or different switching behaviors compared to silicon transistors are desired. Its PNP configuration means it operates with a negative voltage relative to its emitter.
While detailed electrical specifications such as collector current, collector-emitter voltage, and power dissipation are not provided in the available data, the TO-5 package is a common form factor for discrete transistors used in general-purpose amplification and switching circuits. The material composition (Germanium) and transistor type (PNP) are key identifiers for this component.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N1307 is a PNP Germanium transistor.
The 2N1307 transistor comes in a TO-5 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.
