| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,448 pcs
|
3448 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SESCOCEM 2N1305 is a Germanium PNP transistor designed for computer and switching applications. It is housed in a TO-5 case and is suitable for through-hole mounting.
Key electrical characteristics include a maximum Collector-Base Voltage (V CBO) of 30V and a maximum Emitter-Base Voltage (V EBO) of 25V. The continuous collector current is rated at 300 mA, with a power dissipation of 150 mW. The operating junction temperature ranges from -65°C to +85°C, and storage temperature is between -65°C and +100°C.
This transistor exhibits a typical DC current gain (hFE) between 40 and 200 at 10mA collector current and 1.0V collector-emitter voltage. Saturation voltages are also specified, with VCE(SAT) typically 0.20V at 10mA collector current and 0.25mA base current. Other parameters include input and output capacitance, and various switching times like delay, rise, storage, and fall times.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (V CBO) for the 2N1305 is 30V.
The maximum Continuous Collector Current (I C) for the 2N1305 is 300 mA.
The Power Dissipation (P D) for the 2N1305 is 150 mW.
The Operating Junction Temperature for the 2N1305 is -65 to +85 °C.
The 2N1305 is available in a TO-5 case.