| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N1305 is a germanium PNP transistor engineered for computer and switching applications. This component is housed in a TO-5 case and is designed for through-hole mounting.
Key electrical characteristics include a maximum Collector-Base Voltage of 30V and a maximum Emitter-Base Voltage of 25V. The continuous Collector Current is rated at 300mA, with a maximum Power Dissipation of 150mW at 25°C. The operating junction temperature ranges from -65°C to +85°C, with storage temperatures between -65°C and +100°C.
Electrical specifications detail a typical DC Current Gain (hFE) of 40-200 at VCE=1.0V and IC=10mA, and 15 at VCE=0.35V and IC=200mA. Saturation voltages are also specified, with VCE(SAT) at 0.20V and VBE(SAT) typically between 0.15V and 0.35V under specific test conditions. The transistor exhibits a typical common-emitter forward high-frequency current gain (fhfb) of 5.0 MHz.
This transistor is suitable for various switching applications where its germanium properties are beneficial. The TO-5 package is a standard metal can package, facilitating integration into electronic circuits via through-hole assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TO-5.
-65 to +85°C.
300mA.
150mW.
40 to 200 at VCE=1.0V, IC=10mA.
Delay time 0.06μs, rise time 0.16μs, storage time 0.75μs, fall time 0.35μs.