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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1305 is a Germanium PNP transistor manufactured by Texas Instruments, suitable for computer and switching applications. It is housed in a TO-5 case.
Key electrical characteristics include a maximum Collector-Base Voltage (V_CBO) of 30V and a maximum Continuous Collector Current (I_C) of 300mA. The device has a maximum Power Dissipation (P_D) of 150mW at 25°C. Operating junction temperature ranges from -65°C to +85°C.
Electrical specifications include a typical DC Current Gain (hFE) of 40-200 at 10mA collector current and a typical Collector-Emitter Saturation Voltage (V_CE(SAT)) of 0.20V at 10mA collector current and 0.25mA base current. The transistor also exhibits a typical Common Emitter Forward Current Gain Bandwidth Product (fhfb) of 5.0 MHz.
This transistor is designed for through-hole mounting. The lead code specifies Emitter, Base, and Collector connections.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (V_CBO) for the 2N1305 is 30V.
The maximum Continuous Collector Current (I_C) for the 2N1305 is 300mA.
The Power Dissipation (P_D) of the 2N1305 is 150mW at 25°C.
The operating junction temperature range for the 2N1305 is -65°C to +85°C.
The typical DC Current Gain (hFE) of the 2N1305 is between 40 and 200 at V_CE=1.0V and IC=10mA.
The 2N1305 transistor comes in a TO-5 case.