| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present |
The Texas Instruments 2N119 is a single NPN grown junction silicon transistor. It is specifically designed for high gain applications at elevated temperatures and meets the requirements of MIL-T-19500/35.
Key electrical characteristics include a collector breakdown voltage (BVcBO) of 45V, a collector cutoff current (ICBO) of 0.4μA at 30V, and a typical current transfer ratio (hfb) of 100dB. The device also features a typical power gain (PG) of 45dB and a frequency cutoff (fab) of 1.2MHz.
With a welded case and glass-to-metal hermetic seal, the 2N119 is built for reliability. It operates across a wide temperature range from -65°C to +175°C. The transistor is housed in a TO-18 package and is designed for through-hole mounting.
This transistor is suitable for applications requiring high gain and reliability in demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-base breakdown voltage (BVcbo) is 45V at IC = 50μA, IE = 0.
The maximum collector dissipation is 150mW at 25°C ambient temperature.
The operating temperature range is -65°C to +175°C.
The 2N119 is available in a TO-18 package.
The minimum frequency cutoff (fab) is 1.2MHz at VCB = 5V, IE = -1mA.
The typical output capacitance (Cob) is 100pF at VCB = 5V, IE = -1mA.
