| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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130 pcs
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130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fuji Electric 2MBI600U2E-060 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module. This component is engineered for demanding power applications, offering a robust 600A continuous collector current and a 600V collector-emitter voltage rating.
Featuring advanced Field-stop and Trench Gate technology, the 2MBI600U2E-060 ensures efficient power switching and improved performance. The module is designed for surface mount applications, facilitating integration into various power electronic systems.
This IGBT module is part of Fuji Electric's extensive line of power semiconductor devices, known for their reliability and performance in industrial and high-power environments. Its specifications make it suitable for applications requiring high current handling and voltage blocking capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous collector current is 600A.
The maximum collector-emitter voltage is 600V.
It uses Field-stop and Trench gate technology.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.