| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Fujitsu Semiconductor 2MBI50N-120H is an Insulated Gate Bipolar Transistor (IGBT) module designed for power electronic applications. This component is part of the discrete semiconductor product category, specifically within the transistors, IGBTs, and modules subcategory.
Key compliance information indicates that the 2MBI50N-120H is RoHS3 Compliant, has a Moisture Sensitivity Level (MSL) of 1 Unlimited, and is REACH Unaffected. These attributes are important for ensuring compatibility with various manufacturing processes and environmental regulations.
While specific electrical and thermal specifications are not detailed in the provided data, IGBT modules like the 2MBI50N-120H are typically used in high-power switching applications such as motor drives, inverters, and power supplies. Their design allows for efficient power conversion and management.
Further details regarding packaging, mounting type, and specific performance characteristics would typically be found in the manufacturer's datasheet. However, the available information confirms its status as a Fujitsu Semiconductor IGBT module.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2MBI50N-120H is RoHS3 Compliant.
The MSL for the 2MBI50N-120H is 1 Unlimited.
The 2MBI50N-120H is REACH Unaffected.