| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Power Dissipation |
The Fuji Electric 2MBI150U4A-120-50 is a dual N-channel IGBT module designed for power electronic applications. It features a high collector-emitter voltage of 1200V and a continuous DC collector current of 200A.
This module provides a maximum power dissipation of 735W and a pulsed current capability of 400A. The junction temperature can reach up to 150°C, ensuring reliable operation under demanding conditions. Electrical characteristics include a typical collector-emitter saturation voltage of 2.3V and an isolation voltage of 2500V.
The module is housed in an M232 package and utilizes screw mounting for secure installation. It has a rise time of 320ns and a fall time of 410ns. The dimensions are 92mm in width, 30mm in length/height, and 34mm in depth.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vces) is 1200V.
The continuous DC collector current (Ic) is 200A.
The maximum power dissipation is 735W.
The maximum junction temperature is 150°C.
It uses N Channel polarity.
The module dimensions are 92mm width, 30mm length/height, and 34mm depth.
It is mounted using screws.