| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The Infineon Technologies 2EDN8524RXTMA1 is an advanced dual-channel gate driver suitable for driving logic and normal level MOSFETs, IGBTs, and GaN Power devices. It is designed for highly efficient SMPS applications, featuring fast slew rates and precise propagation delays for optimal switching performance.
Key electrical specifications include two independent 5A channels, enabling flexible deployment options. The driver offers tight channel-to-channel delay accuracy of typically 1 ns, allowing for parallel use of channels to achieve 10A source and sink capability. It includes under-voltage lockout (UVLO) options at 4.2V and 8V for robust MOSFET and GaN protection under abnormal conditions. The control and enable inputs are LV-TTL compatible with a wide voltage range and feature -10V robustness for enhanced system stability.
This gate driver is available in the industry-standard PG-TSSOP-8 package, facilitating system design upgrades. Its surface mount type and compact dimensions make it suitable for space-constrained applications. Typical applications include server SMPS, telecom SMPS, DC-to-DC converters, power tools, industrial SMPS, motor control, and solar SMPS.
The 2EDN8524RXTMA1 supports various topologies such as single and interleaved PFC, LLC, and ZVS with pulse transformers. Its design prioritizes ruggedness and efficiency, eliminating the need for external output protection circuitry in many cases.
| Qty | Low | High |
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| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Each channel can sink and source 5 A.
The supply voltage range is 4.5 V to 20 V.
The junction temperature range is -40°C to 150°C.
It is available in a PG-TSSOP-8 surface-mount package.
The typical propagation delay is 17 ns.
It drives N-Channel MOSFETs.