| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon 2ED2304S06F is a 650V half-bridge gate driver IC designed for various power applications. Utilizing Infineon's thin-film-SOI technology, it offers robust performance and noise immunity.
Key electrical specifications include an output source current capability of 0.36A and a sink current capability of -0.7A. The device operates with a gate drive supply range from 10V to 20V and features undervoltage lockout for both channels. It supports input logic compatibility down to 3.3V and includes integrated dead-time with interlocking functionality to prevent shoot-through.
The floating channel is designed for bootstrap operation and can drive N-channel power MOSFETs or IGBTs in high-side configurations up to 650V. The driver is tolerant to negative transient voltages up to -100V and offers dV/dt immunity of ±50V.
Packaged in a DSO-8, the 2ED2304S06F is suitable for applications such as motor drives, general-purpose inverters, and converters in offline AC-DC power supplies for telecom and lighting. It is qualified for industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.56 | $0.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2ED2304S06F is fully operational to 650 V.
The typical output source current is 0.36 A and the typical output sink current is -0.7 A.
The gate drive supply range is from 10 V to 20 V.
The 2ED2304S06F is available in a DSO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.