2ED2181S06F The Infineon 2ED2181S06F is a 650V high-side and low-side gate driver IC with integrated bootstrap diode. It features independent output channels and robust SOI technology.
Mfr Part #:

2ED2181S06F

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon 2ED2181S06F is a 650V high-side and low-side gate driver IC with integrated bootstrap diode. It features independent output channels and robust SOI technology.
✓ Total Stock: 1,340 pcs
$ Price Range: $2.01

2ED2181S06F Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,340 pcs
1340 pcs On Request 1 On Request On Request On Request On Request On Request

2ED2181S06F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Halogen Free
Mounting Type
Propagation Delay
Tape & Reel
Voltage

2ED2181S06F Description

Short technical summary and product information.

The Infineon 2ED2181S06F is a high-voltage, high-speed power MOSFET and IGBT driver. It offers independent high and low side referenced output channels, based on Infineon's SOI-technology for excellent ruggedness and noise immunity.

 

Key electrical specifications include a maximum VS_OFFSET of 650V, typical output peak current of +/- 2.5A, and operating voltages (VS node) up to +650V. The device supports bootstrap operation with a maximum bootstrap voltage (VB node) of +675V. It features delay matching of 35ns max and a propagation delay of 200ns. The driver is compatible with 3.3V, 5V, and 15V logic inputs and can operate at negative voltages down to -11V on the VS pin.

 

Potential applications for the 2ED2181S06F include driving IGBTs and enhancement mode N-Channel MOSFETs in various power electronic applications such as motor drives, general-purpose inverters, refrigeration compressors, induction cookers, and offline AC-DC power supplies. It is available in DSO-8 and DSO-14 package options.

 

The device is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1.

2ED2181S06F Quick Information

Product Type: Gate Driver
Canonical Name: Infineon 2ED2181S06F 650V High-Side and Low-Side Gate Driver

2ED2181S06F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 2
REACH Status: REACH Unaffected
Lead Free: Yes

2ED2181S06F Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

2ED2181S06F Features

  • 650V maximum VS_OFFSET voltage.
  • Typical output current of +/- 2.5A.
  • Integrated ultra-fast bootstrap diode.
  • 35ns maximum delay matching.
  • Available in DSO-8 and DSO-14 packages.

2ED2181S06F Applications

  • Drives IGBTs and N-Channel MOSFETs.
  • Suitable for motor drives.
  • Used in general-purpose inverters.
  • Applicable to home appliances.
  • Supports AC-DC power supplies.

2ED2181S06F FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum operating voltage for the VS node?

The maximum operating voltage for the VS node is 650 V.

What is the typical output current for the 2ED2181S06F?

The typical output current (Io+pk / Io-pk) is + 2.5 A/ - 2.5 A.

What is the delay matching specification?

The delay matching is a maximum of 35 ns.

What package options are available for the 2ED2181S06F?

The 2ED2181S06F is available in DSO-8 and DSO-14 package options.

Is the 2ED2181S06F RoHS compliant?

The product is listed as RoHS3 Compliant.

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