| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The Infineon Technologies 2ED2108S06FXUMA1 is a high-voltage, high-speed power MOSFET and IGBT driver. It features a unique Infineon Thin-Film-Silicon On Insulator (SOI) technology and is designed for bootstrap operation with a floating channel. The device supports operating voltages up to 650V on the VS node and a maximum bootstrap voltage of 675V on the VB node.
Key electrical specifications include an output current of 290mA positive peak and 700mA negative peak, with a delay matching of 35ns maximum. The internal deadtime is typically 540ns, and turn-on/turn-off times are approximately 200ns. It is compatible with 3.3V, 5V, and 15V input logic and operates with a supply voltage range of 10V to 20V.
This gate driver IC is suitable for driving IGBTs and N-Channel MOSFETs in various power electronic applications, including motor drives, general-purpose inverters, and home appliances. It is available in a Surface Mount PG-DSO-8-53 package, specifically an 8-SOIC (0.154", 3.90mm Width).
The 2ED2108S06FXUMA1 is RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 10 V to 20 V.
The operating temperature range is -40°C to 125°C.
It provides +0.29 A peak source current and -0.7 A peak sink current.
The package is PG-DSO-8-53, equivalent to an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The maximum high-side voltage is 650 V.