| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The 2ED2106S06FXUMA1 from Infineon Technologies is a high-voltage, high-speed power MOSFET and IGBT driver. It features independent high and low side referenced output channels, utilizing Infineon's SOI-technology for excellent ruggedness and noise immunity.
This gate driver IC supports a voltage range of 10V to 20V and can handle high-side voltages up to 675V. It provides independent under-voltage lockout for both channels and is compatible with 3.3V, 5V, and 15V input logic. The device offers typical output currents of +0.29A and -0.7A, with a nominal rise time of 35ns and 100ns.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, the 2ED2106S06FXUMA1 is suitable for various power electronic applications. Its operating temperature range is -40°C to 125°C (TA).
Potential applications include driving IGBTs and enhancement mode N-Channel MOSFETs in motor drives, general-purpose inverters, home appliances, industrial SMPS, and EV charging stations.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 10 V to 20 V.
The maximum high-side voltage is 675 V.
The typical output currents are +0.29 A and -0.7 A.
The operating temperature range is -40°C to 125°C (TA).
It is supplied in an 8-SOIC (0.154", 3.90mm Width) package.
Yes, it is RoHS3 Compliant.