| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Halogen Free | |
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The Diodes Incorporated 2DD1766P is an NPN epitaxial planar die construction transistor suitable for automated assembly processes. It is ideal for medium power switching or amplification applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 32V and a continuous collector current (IC) of 2A. The device features a typical DC current gain (hFE) ranging from 82 to 390 depending on the specific suffix (P, Q, or R) and operates at a transition frequency (fT) of 220MHz.
Packaged in a SOT89-3L surface mount case, the 2DD1766P is constructed from "Green" molding compound and has matte tin plated terminals. It is designed for reliability, with a moisture sensitivity level of 1.
This part is also noted as being totally lead-free, fully RoHS compliant, and halogen and antimony-free. It is qualified for automotive applications (AEC-Q101) and manufactured in IATF 16949 certified facilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 32V.
The maximum continuous collector current is 2A.
The package type is SOT89-3L, a surface mount package.
The operating and storage temperature range is -55°C to +150°C.
Yes, the 2DD1766P is RoHS3 compliant.
The typical transition frequency is 220MHz.
The typical DC current gain is 180 at VCE = 3V and IC = 0.5A, with a range of 82 to 390 depending on the part suffix.