| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,000 pcs
|
32000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The 2DD1664R-13 is an NPN epitaxial planar transistor designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 32V and a continuous collector current (IC) of 1A, with a peak pulse current capability of 2A. The DC current gain (hFE) is a minimum of 180 at 100mA collector current and 3V collector-emitter voltage, ensuring consistent performance. The transistor offers a transition frequency (fT) of 280MHz, making it suitable for high-speed switching circuits.
Packaged in a surface-mount SOT89 (SOT-89-3) case, the device is designed for automated assembly processes. It is fully RoHS3 compliant, lead-free, and halogen- and antimony-free (green device). The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 1W at 25°C ambient. The complementary PNP type (2DB1132) is available for push-pull configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.92 | $0.92 |
| 10+ | $0.55 | $0.55 |
| 100+ | $0.39 | $0.39 |
| 500+ | $0.29 | $0.29 |
| 1,000+ | $0.21 | $0.21 |
| 2,500+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
32V.
SOT89 (SOT-89-3).
-55°C to 150°C (junction).
Yes, RoHS3 compliant and lead-free.
Minimum 180 at 100mA, 3V.
280MHz.
2DB1132 from Diodes Incorporated.