2DB1424R

The 2DB1424R from Diodes Incorporated is a PNP epitaxial planar die construction transistor. It is ideally suited for automated assembly processes and is designed for medium power switching or amplification applications.

Key electrical characteristics include a collector-emitter breakdown voltage of -20V, a continuous collector current of -3A, and a peak pulse current of -5A. The DC current gain (hFE) ranges from 180 to 390 at VCE = -2V and IC = -0.1A. The collector-emitter saturation voltage (VCE(SAT)) is a maximum of -0.5V at IC = -2A and IB = -0.1A. The output capacitance (Cobo) is typically 28pF at VCB = -10V, IE = 0, and f = 1MHz, with a current gain-bandwidth product (fT) of typically 220MHz at VCE = -2V, IE = 0.1A, and f = 100MHz.

This transistor is housed in a SOT89-3L surface mount package, making it suitable for automated assembly. The case material is molded plastic with a UL Flammability Classification Rating of 94V-0. Terminals are finished with matte tin annealed over a copper leadframe, solderable per MIL-STD-202, Method 208. The operating and storage temperature range is -55°C to +150°C. Power dissipation is rated at 1W at TA = 25°C, with a thermal resistance (RθJA) of 125°C/W.

The 2DB1424R is noted as being Lead Free By Design/RoHS Compliant and a "Green" device. A complementary NPN type, the 2DD2150, is also available.