2DB1386R-13 PNP medium power transistor, 20V VCEO, 5A continuous collector current, in a SOT89-3 surface mount package.
Mfr Part #:

2DB1386R-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
PNP medium power transistor, 20V VCEO, 5A continuous collector current, in a SOT89-3 surface mount package.
Total Stock: 10,390 pcs
$ Price Range: $0.23 - $1.13

2DB1386R-13 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
390 pcs
390 pcs On Request 1 On Request On Request 1311+ On Request On Request

2DB1386R-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base Current (IB) (Max)
Collector-Base Voltage (VCBO) Max
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO) Max
Frequency
Halogen Free
Lead Finish
Mounting Type
Operating Temperature
Packaging Type
Peak Pulse Collector Current (ICM) (Max)
Power
Reel Size
Standard Package Quantity
Supplier Device Package
Tape & Reel
Tape Width
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance, Junction to Leads (RθJL)
Transistor Type
Vce Sat Max (Maximum @ Ic = -4 A (PNP)
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

2DB1386R-13 Description

Short technical summary and product information.

The 2DB1386R-13 is a PNP medium power bipolar junction transistor from Diodes Incorporated. It features a maximum collector-emitter voltage of 20V and a continuous collector current rating of 5A, with a peak pulse current of 10A. The DC current gain (hFE) is a minimum of 180 at 500mA collector current and 2V collector-emitter voltage. Saturation voltage is typically low at a maximum of 1V at 4A collector current.

 

This transistor is designed for general purpose medium power switching and amplification applications. It is housed in a surface mount SOT89 (TO-243AA) package with matte tin plated leads, weighing approximately 0.052 grams. The device is fully RoHS3 compliant and contains no lead, and is also halogen and antimony free.

 

The complementary NPN type is the 2DD2098. The part is available in tape and reel packaging with 2500 units per 13" reel.

2DB1386R-13 Quick Information

Product Type: Bipolar Junction Transistor
Series: 2DB1386
Canonical Name: 2DB1386R-13 PNP Medium Power Transistor
Subcategory: Single

2DB1386R-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

2DB1386R-13 Estimated Pricing

Qty Low High
1+ $1.13 $1.13
10+ $0.70 $0.70
100+ $0.45 $0.45
500+ $0.29 $0.29
1,000+ $0.26 $0.26
2,500+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

2DB1386R-13 Features

  • 20V collector-emitter breakdown voltage (BVCEO > -20V).
  • 5A continuous collector current rating.
  • Low saturation voltage: VCE(sat) < -1V @ -4A.
  • Surface mount SOT89-3 package.
  • RoHS3 compliant and lead-free.

2DB1386R-13 Applications

  • Medium power switching circuits.
  • General purpose amplification stages.
  • Load driver applications requiring up to 5A.
  • Complementary pair with NPN 2DD2098.

2DB1386R-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2DB1386R-13?

The maximum collector-emitter voltage (VCEO) is 20V.

What is the maximum continuous collector current rating?

The maximum continuous collector current (IC) is 5A.

What package is the 2DB1386R-13 available in?

The transistor is available in an SOT89 (TO-243AA) surface mount package.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

Is the 2DB1386R-13 RoHS compliant?

Yes, the device is RoHS3 compliant and lead-free.

What is the DC current gain (hFE) of the 2DB1386R-13?

The minimum DC current gain (hFE) is 180 at a test condition of Ic=500mA and Vce=2V.

What is the complementary NPN type for this transistor?

The complementary NPN type is the 2DD2098.

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