2DB1188R-13 PNP medium power transistor rated at 32V VCEO and 2A continuous collector current. Surface mount package SOT89-3.
Mfr Part #:

2DB1188R-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
PNP medium power transistor rated at 32V VCEO and 2A continuous collector current. Surface mount package SOT89-3.
Total Stock: 1,090 pcs
$ Price Range: $0.17 - $0.97

2DB1188R-13 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
590 pcs
590 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
500 pcs
500 pcs On Request 1 On Request On Request 20+ On Request On Request

2DB1188R-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Package Material
Peak Pulse Collector Current (ICM)
Power
Quantity Per Reel
Reel Size
Supplier Device Package
Tape & Reel
Tape Width
Terminal Finish
Termination Style
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance, Junction to Leads (RθJL)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

2DB1188R-13 Description

Short technical summary and product information.

The 2DB1188R-13 is a PNP medium power bipolar junction transistor from Diodes Incorporated. It features a maximum collector-emitter voltage (VCEO) of -32V and continuous collector current (IC) of -2A, making it suitable for general purpose switching and amplification applications. The device offers a minimum DC current gain (hFE) of 180 at 500mA, 3V and a low saturation voltage of -800mV maximum at 2A. With a typical transition frequency of 120 MHz, it can handle moderate speed switching requirements. The transistor is housed in a surface mount SOT89-3 package (TO-243AA) with matte tin plated leads, and is rated for a maximum power dissipation of 1W. It operates over a junction temperature range of -55°C to 150°C. The device is fully RoHS3 compliant, lead-free, and halogen-free (Green).

2DB1188R-13 Quick Information

Product Type: PNP Bipolar Junction Transistor
Canonical Name: 2DB1188R-13 PNP Medium Power Transistor
Subcategory: Bipolar (BJT) - Single

2DB1188R-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

2DB1188R-13 Estimated Pricing

Qty Low High
1+ $0.97 $0.97
10+ $0.65 $0.65
100+ $0.41 $0.41
500+ $0.27 $0.27
1,000+ $0.21 $0.21
2,500+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

2DB1188R-13 Features

  • PNP medium power bipolar junction transistor.
  • Rated for 32V maximum collector-emitter voltage.
  • Supports 2A continuous collector current.
  • Low saturation voltage of 800mV maximum.
  • Surface mount in SOT89-3 package.

2DB1188R-13 Applications

  • Medium power switching for DC-DC converters.
  • Driver for relays and solenoids.
  • Output stage for audio amplifiers.
  • Load switch in portable electronics.

2DB1188R-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

Maximum VCEO is -32V.

What package is this transistor available in?

Surface mount SOT89-3 (TO-243AA).

What is the operating temperature range?

Junction temperature range from -55°C to 150°C.

Is the 2DB1188R-13 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the DC current gain (hFE)?

Minimum hFE of 180 at Ic=500mA, Vce=3V.

What is the transition frequency?

Typical transition frequency is 120 MHz.

What is the maximum collector current?

Continuous collector current is -2A maximum.

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