2DB1188Q 2DB1188Q by Diodes Incorporated is a single bipolar junction transistor suitable for general purpose switching and amplification applications.
Mfr Part #:

2DB1188Q

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
2DB1188Q by Diodes Incorporated is a single bipolar junction transistor suitable for general purpose switching and amplification applications.
✓ Total Stock: 15,000 pcs
$ Price Range: $0.85

2DB1188Q Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
15,000 pcs
15000 pcs On Request 1 On Request On Request 24+ On Request On Request

2DB1188Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2DB1188Q Description

Short technical summary and product information.

The 2DB1188Q is a single bipolar junction transistor (BJT) manufactured by Diodes Incorporated. As a discrete semiconductor component, it is designed for general purpose switching and amplification circuits.

 

This transistor is part of the broad portfolio of bipolar transistors offered by Diodes Incorporated, a leading manufacturer of semiconductor components. The device is typically used in low-frequency amplification and moderate-speed switching applications found in consumer electronics, industrial controls, and automotive systems.

 

Packaging details and electrical characteristics such as voltage and current ratings are available from the manufacturer datasheet. Design engineers should consult the official documentation for complete specifications and thermal performance data.

2DB1188Q Quick Information

Product Type: Transistor (BJT) - Single
Canonical Name: 2DB1188Q
Subcategory: Single

2DB1188Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2DB1188Q Estimated Pricing

Qty Low High
1+ $0.85 $0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

2DB1188Q Features

  • PNP bipolar junction transistor for switching.
  • Maximum collector current of 2 amperes.
  • Collector-emitter voltage rating of 32 volts.
  • Power dissipation up to 1 watt.
  • Transition frequency of 120 megahertz.

2DB1188Q Applications

  • Used for general amplification and signal switching.
  • Ideal for voltage regulation circuits.
  • Suitable for high-frequency pulse circuits.
  • Designed for industrial and consumer electronics.

2DB1188Q Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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BAT54A/215
BAT54A/215
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