| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 1411+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The 2DB1184Q-13 is a PNP medium power bipolar junction transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of -50V and a continuous collector current rating of -3A, with a peak pulse current capability of -4.5A. The device offers a DC current gain (hFE) of 120 minimum at 500mA collector current and 3V VCE, and a low collector-emitter saturation voltage of 1V maximum at 2A collector current. The transition frequency (fT) is 110 MHz, making it suitable for medium power switching and amplification applications.
The transistor is housed in a surface-mount TO-252-3 (DPAK) package with a molded plastic case that is UL 94V-0 rated and halogen-free. The terminals are matte tin plated for solderability. The device has a moisture sensitivity level of 1 (unlimited) per J-STD-020. Thermal resistance from junction to ambient is 104°C/W, and from junction to lead is 8.3°C/W. Maximum power dissipation is 1.2W at 25°C ambient temperature and 15W at 25°C lead temperature.
The 2DB1184Q-13 is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications. It is fully RoHS compliant and halogen and antimony free. The device is available in tape and reel packaging with 2500 units per reel, suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.94 | $0.94 |
| 10+ | $0.58 | $0.58 |
| 100+ | $0.38 | $0.38 |
| 500+ | $0.29 | $0.29 |
| 2,500+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is -50V, collector-base voltage (VCBO) is -60V, and emitter-base voltage (VEBO) is -5V.
The transistor is housed in a surface-mount TO-252-3 (DPAK) package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is fully RoHS compliant as stated in the datasheet.
The minimum hFE is 120 at Ic=500mA, Vce=3V.
The continuous collector current is -3A, with a peak pulse current of -4.5A.
Yes, it is qualified to AEC-Q101 standards for high reliability.