2DB1184Q-13 The 2DB1184Q-13 is a PNP medium power transistor from Diodes Incorporated with a collector-emitter voltage rating of -50V and continuous collector current of -3A. It is housed in a surface-mount TO-252-3 package.
Mfr Part #:

2DB1184Q-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The 2DB1184Q-13 is a PNP medium power transistor from Diodes Incorporated with a collector-emitter voltage rating of -50V and continuous collector current of -3A. It is housed in a surface-mount TO-252-3 package.
Total Stock: 5,000 pcs
$ Price Range: $0.23 - $0.94

2DB1184Q-13 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 1411+ On Request On Request

2DB1184Q-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
AEC-Q101 Qualified
Automotive Grade
Case Material
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD - Human Body Model (HBM)
ESD - Machine Model (MM)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Peak Pulse Collector Current (ICM)
Power
Power Dissipation (PD) (Nominal @ TA=25 °C)
SVHC Present
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Terminal Finish
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance Junction to Lead (RθJL)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

2DB1184Q-13 Description

Short technical summary and product information.

The 2DB1184Q-13 is a PNP medium power bipolar junction transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of -50V and a continuous collector current rating of -3A, with a peak pulse current capability of -4.5A. The device offers a DC current gain (hFE) of 120 minimum at 500mA collector current and 3V VCE, and a low collector-emitter saturation voltage of 1V maximum at 2A collector current. The transition frequency (fT) is 110 MHz, making it suitable for medium power switching and amplification applications.

 

The transistor is housed in a surface-mount TO-252-3 (DPAK) package with a molded plastic case that is UL 94V-0 rated and halogen-free. The terminals are matte tin plated for solderability. The device has a moisture sensitivity level of 1 (unlimited) per J-STD-020. Thermal resistance from junction to ambient is 104°C/W, and from junction to lead is 8.3°C/W. Maximum power dissipation is 1.2W at 25°C ambient temperature and 15W at 25°C lead temperature.

 

The 2DB1184Q-13 is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications. It is fully RoHS compliant and halogen and antimony free. The device is available in tape and reel packaging with 2500 units per reel, suitable for automated assembly processes.

2DB1184Q-13 Quick Information

Product Type: PNP Bipolar Transistor
Series: 2DB1184Q
Canonical Name: 2DB1184Q-13 - PNP Transistor, 50V, 3A, TO-252-3
Subcategory: Medium Power PNP Transistor

2DB1184Q-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2DB1184Q-13 Estimated Pricing

Qty Low High
1+ $0.94 $0.94
10+ $0.58 $0.58
100+ $0.38 $0.38
500+ $0.29 $0.29
2,500+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

2DB1184Q-13 Features

  • PNP medium power bipolar transistor.
  • Rated for -50V collector-emitter voltage.
  • Continuous collector current of -3A.
  • Low saturation voltage of 1V at 2A.
  • AEC-Q101 qualified for automotive use.

2DB1184Q-13 Applications

  • Medium power switching circuits.
  • General purpose amplification.
  • Automotive electronic modules.
  • DC-DC converter applications.

2DB1184Q-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the 2DB1184Q-13?

The collector-emitter voltage (VCEO) is -50V, collector-base voltage (VCBO) is -60V, and emitter-base voltage (VEBO) is -5V.

What is the package type of the 2DB1184Q-13?

The transistor is housed in a surface-mount TO-252-3 (DPAK) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the 2DB1184Q-13 RoHS compliant?

Yes, it is fully RoHS compliant as stated in the datasheet.

What is the DC current gain (hFE) of the 2DB1184Q-13?

The minimum hFE is 120 at Ic=500mA, Vce=3V.

What is the continuous collector current rating?

The continuous collector current is -3A, with a peak pulse current of -4.5A.

Is the 2DB1184Q-13 qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability.

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