2DB1182Q-13

The 2DB1182Q-13 is a PNP medium power bipolar junction transistor from Diodes Incorporated, designed for general purpose switching and amplification applications. It features a collector-emitter voltage (VCEO) of -32V, a continuous collector current of -2A, and a peak pulse current of -3A. The device offers a DC current gain (hFE) of 120 minimum at 500mA, 3V, and a low collector-emitter saturation voltage of 800mV maximum at 2A, 200mA base current. With a transition frequency of 110 MHz, it is suitable for medium frequency switching circuits. The transistor is packaged in a TO-252-3 (DPAK) surface mount package, which provides excellent thermal performance with a junction-to-ambient thermal resistance of 104°C/W and a junction-to-lead thermal resistance of 8.3°C/W. It can dissipate up to 1.2W at ambient temperature and 15W at lead temperature of 25°C. The operating junction temperature range is -55°C to 150°C. The device is AEC-Q101 qualified, making it suitable for automotive applications. It is also RoHS3 compliant, lead-free, halogen and antimony free, and has a moisture sensitivity level of 1 per J-STD-020. The terminals are matte tin plated for solderability. The standard reel packaging contains 2500 pieces on a 13-inch reel with 16mm tape width.