2DB1132R-13 PNP power switching transistor with 32V collector-emitter breakdown voltage and 1A continuous collector current in a surface-mount SOT-89-3 package.
Mfr Part #:

2DB1132R-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
PNP power switching transistor with 32V collector-emitter breakdown voltage and 1A continuous collector current in a surface-mount SOT-89-3 package.
Total Stock: 22,000 pcs
$ Price Range: $0.15 - $0.87

2DB1132R-13 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
22,000 pcs
22000 pcs On Request 1 On Request On Request 16+ On Request On Request

2DB1132R-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Case Material
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Peak Pulse Current (ICM)
Power
Solderability
Supplier Device Package
Tape & Reel
Terminal Finish
Thermal Resistance Junction to Ambient (RθJA)
Transistor Type
UL Flammability Rating
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

2DB1132R-13 Description

Short technical summary and product information.

The 2DB1132R-13 is a 32V PNP power switching transistor from Diodes Incorporated in a SOT-89-3 surface-mount package. It features a continuous collector current of -1A and a peak pulse current of -2A. The device offers a DC current gain (hFE) of 180 minimum at 100mA, 3V, and a transition frequency of 190 MHz. The collector-emitter saturation voltage is 500 mV maximum at 50mA base current and 500mA collector current. Power dissipation is 1W with a junction-to-ambient thermal resistance of 125°C/W. The operating temperature range is -55°C to 150°C.

 

The transistor is housed in a molded plastic case with UL flammability rating 94V-0, MSL Level 1, and matte tin plated leads. It is RoHS3 compliant, lead-free, and halogen-free. This device is suitable for medium power switching and amplification applications, and is designed for automated assembly processes.

2DB1132R-13 Quick Information

Product Type: Power Switching Transistor
Series: 2DB1132
Canonical Name: 2DB1132R-13 32V PNP Power Switching Transistor
Subcategory: Bipolar Junction Transistor (BJT) - Single

2DB1132R-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2DB1132R-13 Estimated Pricing

Qty Low High
1+ $0.87 $0.87
10+ $0.58 $0.58
100+ $0.37 $0.37
500+ $0.24 $0.24
1,000+ $0.19 $0.19
2,500+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

2DB1132R-13 Features

  • 32V collector-emitter breakdown voltage.
  • 1A continuous collector current capability.
  • 190 MHz transition frequency.
  • Surface-mount SOT-89-3 package.
  • RoHS3 compliant and halogen-free.

2DB1132R-13 Applications

  • Ideal for medium power switching circuits.
  • Suitable for amplification applications.
  • Designed for automated assembly processes.
  • Complementary NPN type 2DD1664 available.

2DB1132R-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (VCEO) of the 2DB1132R-13?

The collector-emitter breakdown voltage is -32 V.

What is the maximum continuous collector current?

The continuous collector current is -1 A.

What is the package type for the 2DB1132R-13?

The package is SOT-89-3 (TO-243AA).

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is the 2DB1132R-13 RoHS compliant?

Yes, it is RoHS3 compliant (EU Directive 2002/95/EC, 2011/65/EU, 2015/863/EU).

What is the DC current gain (hFE) of the 2DB1132R-13?

The minimum DC current gain is 180 at Ic=100mA, Vce=3V.

What is the transition frequency of the 2DB1132R-13?

The transition frequency is 190 MHz.

Home
Account

Categories