| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Diodes Incorporated 2DB1132R is a PNP bipolar junction transistor (BJT) designed for various electronic applications. This single transistor configuration offers a maximum collector-emitter voltage (VCEO) of 32V and a maximum continuous collector current (Ic) of 1A. It boasts a minimum DC current gain (Hfe) of 180, indicating good amplification capabilities.
The transistor operates within a wide temperature range, from -55°C to +150°C, making it suitable for demanding environments. Its power dissipation is rated at 1000mW (1W). The device is housed in a surface-mount SOT-89 package, facilitating easy integration into printed circuit boards.
Key electrical characteristics include a collector-base voltage (VCBO) of 40V, an emitter-base voltage (VEBO) of 5V, and a low collector-emitter saturation voltage of -125mV. The gain bandwidth product (fT) is 190MHz, suggesting suitability for moderate frequency applications. The component is supplied on a reel for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 32V.
The 2DB1132R is available in a SOT-89 surface mount package.
The operating temperature range is from -55°C to +150°C.
The maximum DC collector current is 1A.
The gain bandwidth product is 190MHz.
The minimum DC collector/base gain (hFE) is 180.
The mounting style is SMD/SMT.